to-92 plastic-encapsulate transistors STB1277 transistor (pnp) features z audio power amplifier z high current application z high current : i c =-2a z complementary pair with std1862 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -2 a p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v cbo i c = -100ua, i e =0 -30 v collector-emitter breakdown voltage v ceo i c = -1ma , i b =0 -30 v emitter-base breakdown voltage v ebo i e = -1ma, i c =0 -5 v collector cut-off current i cbo v cb = -30 v, i e =0 -0.1 ua emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 ua dc current gain h fe v ce =-2v, i c = -500ma 100 320 collector-emitter saturation voltage v ce(sat) i c =-2a, i b = -0.2a -0.8 v base-emitter on voltage v be(on) v ce =-2v, i c = -500ma -1 v transition frequency f t v ce = -5v, i c = -50ma 170 mhz collector output capacitance cob v cb =-10v,i e =0,f=1mh z 48 pf classification h fe rank o y range 100-200 160-320 to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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